NEW ASPECTS OF ELECTRON-TRANSFER ON SEMICONDUCTOR SURFACE - DYE-SENSITIZATION SYSTEM

被引：98

作者：

SAKATA, T ^{[1
]}

HASHIMOTO, K ^{[1
]}

HIRAMOTO, M ^{[1
]}

机构：

[1] INST MOLEC SCI,OKAZAKI,AICHI 444,JAPAN

来源：

JOURNAL OF PHYSICAL CHEMISTRY | 1990年 / 94卷 / 07期

关键词：

D O I：

10.1021/j100370a056

中图分类号：

O64 [物理化学（理论化学）、化学物理学];

学科分类号：

070304 ; 081704 ;

摘要：

A simple model for the electron transfer (ET) from excited dyes to the conduction band of semiconductors is proposed. It is shown that the equation for the ET rate does not contain the Franck-Condon term, but the state density of the semiconductor plays an important role. The energy gap dependence of ET rates in the dye-sensitized semiconductors, which is quite different from those in molecular systems, is explained well by this model. The electron exchange energy is determined for Ru complexes and Rhodamine B on oxide semiconductors. Temperature dependence of the electron exchange energy term, caused by thermal motion of adsorbed dyes, is suggested as a new origin of activation energy of ET on the surface. The temperature dependence of the ET rates is explained well by this model. © 1990 American Chemical Society.

引用

页码：3040 / 3045

页数：6

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