EFFECTS OF BE AND SI ON DISORDERING OF THE ALAS/GAAS SUPERLATTICE

被引：62

作者：

KAWABE, M

SHIMIZU, N

HASEGAWA, F

NANNICHI, Y

机构：

来源：

关键词：

D O I：

10.1063/1.95860

中图分类号：

O59 [应用物理学];

学科分类号：

摘要：

引用

页码：849 / 850

页数：2

共 7 条

[1] INTERDIFFUSION BETWEEN GAAS AND ALAS
CHANG, LL
KOMA, A
[J]. APPLIED PHYSICS LETTERS, 1976, 29 (03) : 138 - 141
[2] DISORDER OF AN ALAS-GAAS SUPER-LATTICE BY SILICON IMPLANTATION
COLEMAN, JJ
DAPKUS, PD
KIRKPATRICK, CG
CAMRAS, MD
HOLONYAK, N
[J]. APPLIED PHYSICS LETTERS, 1982, 40 (10) : 904 - 906
[3] ENQUIST P, 1984, UNPUB AUG INT C MOL
[4] X-RAY-DIFFRACTION STUDY OF INTER-DIFFUSION AND GROWTH IN (GAAS)N(AIAS)M MULTILAYERS
FLEMING, RM
MCWHAN, DB
GOSSARD, AC
WIEGMANN, W
LOGAN, RA
[J]. JOURNAL OF APPLIED PHYSICS, 1980, 51 (01) : 357 - 363
[5] DISORDERING OF SI-DOPED ALAS/GAAS SUPERLATTICE BY ANNEALING
KAWABE, M
MATSUURA, N
SHIMIZU, N
HASEGAWA, F
NANNICHI, Y
[J]. JAPANESE JOURNAL OF APPLIED PHYSICS PART 2-LETTERS, 1984, 23 (08): : L623 - L624
[6] LAIDIG WD, 1981, APPL PHYS LETT, V38, P776, DOI 10.1063/1.92159
[7] Ogura M., COMMUNICATION