RESONANT RAMAN-SCATTERING FROM MOBILE ELECTRONS IN THE FRACTIONAL QUANTUM HALL REGIME

被引：31

作者：

PLATZMAN, PM

HE, S

机构：

[1] AT and T Bell Laboratories, Murray Hill

来源：

PHYSICAL REVIEW B | 1994年 / 49卷 / 19期

关键词：

D O I：

10.1103/PhysRevB.49.13674

中图分类号：

T [工业技术];

学科分类号：

08 ;

摘要：

We show that the resonant Raman cross section for the scattering of light from two-dimensional electrons in GaAs quantum wells in the fractional quantum Hall regime, to a good approximation, has a piece proportional to the projected structure factor and another piece coming from hole shakeup proportional to a specific higher-order structure factor. Exact numerical results for up to ten particles at all momentum transfers are presented and discussed.

引用

页码：13674 / 13679

页数：6

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