A W-BAND MONOLITHIC, SINGLY BALANCED RESISTIVE MIXER WITH LOW CONVERSION LOSS

被引：16

作者：

CHANG, KW

LIN, EW

WANG, H

TAN, KL

KU, WH

机构：

[1] the Space and Electronics Group, TRW, Inc., CA, 90278, Redondo Beach

[2] the Department of Electrical and Computer Engineering University of California, San Diego, CA

来源：

IEEE MICROWAVE AND GUIDED WAVE LETTERS | 1994年 / 4卷 / 09期

关键词：

D O I：

10.1109/75.311514

中图分类号：

TM [电工技术]; TN [电子技术、通信技术];

学科分类号：

0808 ; 0809 ;

摘要：

We report the design, measured and simulated performance of a novel W-band monolithic, singly balanced resistive FET mixer utilizing 0.1-mum pseudomorphic AlGaAs/InGaAs on GaAs HEMT technology. At an LO drive of +8 dBm, this mixer has exhibited a minimum measured conversion loss of 12.8 dB, nearly a 10 dB improvement over previously reported data in this frequency range. Furthermore, the mixer figure of merit, defined as P(1-dB,in) - P(LO), is at least +2 dBm, which is nominally 6 dBm better than that of comparable diode mixers at W-band. These results indicate the excellent potential of this mixer for integration with other circuit components in fully monolithic subsystems.

引用

页码：301 / 302

页数：2

共 8 条

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