NANOMETER HOLE FORMATION IN MGO USING ELECTRON-BEAMS

被引：46

作者：

TURNER, PS ^{[1
]}

BULLOUGH, TJ ^{[1
]}

DEVENISH, RW ^{[1
]}

MAHER, DM ^{[1
]}

HUMPHREYS, CJ ^{[1
]}

机构：

[1] AT&T BELL LABS,MURRAY HILL,NJ 07974

来源：

PHILOSOPHICAL MAGAZINE LETTERS | 1990年 / 61卷 / 04期

基金：

英国工程与自然科学研究理事会;

关键词：

D O I：

10.1080/09500839008202357

中图分类号：

T [工业技术];

学科分类号：

08 ;

摘要：

Square cross-sectional holes with widths of about 1 nm can be formed in MgO crystals using circular cross-section high-current-density electron probes which are focused and oriented close to <001 >. High-resolution scanning transmission electron microscopy has been used to reveal, on a unit cell scale, the threedimensional geometry of the hole structures as they grow. The holes develop from the electron exit face of the crystal, have a profile which is clearly related to that of the electron probe, and can be generated with incident electron energies as low as 40keV. Unlike other inorganic materials, there appears to be no lower current density threshold for hole formation and there is no excess Mg or O present in the MgO crystal after hole formation, suggesting that the MgO is desorbed as molecules or clusters. A model for the hole formation process is proposed. © 1990 Taylor & Francis Group, LLC.

引用

页码：181 / 193

页数：13

共 21 条

[1] ELECTRON ENERGY-LOSS SPECTROSCOPY STUDIES OF NANOMETER-SCALE STRUCTURES IN ALUMINA PRODUCED BY INTENSE ELECTRON-BEAM IRRADIATION [J].