NUCLEATION AND GROWTH OF DIAMOND ON SI, CU, AND AU SUBSTRATES

被引：30

作者：

NIU, C ^{[1
]}

TSAGAROPOULOS, G ^{[1
]}

BAGLIO, J ^{[1
]}

DWIGHT, K ^{[1
]}

WOLD, A ^{[1
]}

机构：

[1] GTE LABS INC,WALTHAM,MA 02254

来源：

JOURNAL OF SOLID STATE CHEMISTRY | 1991年 / 91卷 / 01期

关键词：

D O I：

10.1016/0022-4596(91)90056-N

中图分类号：

O61 [无机化学];

学科分类号：

070301 ; 081704 ;

摘要：

A hot tungsten filament reactor was used to deposit diamond films on silicon, copper, and gold substrates. Diamond can be readily nucleated on all three substrates, but the nucleation density is greatly enhanced by prescratching with 0.25-μm diamond paste. Visual examination of photomicrographs of diamond crystallites formed on prescratched silicon substrates indicates that no new nuclei are formed between 1 and 2 hr of deposition. However, new nuclei are formed throughout this period when the substrate is copper or gold. Deposite diamond films adhered to silicon substrates, but could be readily removed from copper and gold substrates. © 1991.

引用

页码：47 / 56

页数：10

共 19 条

[1] RAPID GROWTH OF DIAMOND FILMS BY ARC-DISCHARGE PLASMA CVD [J].