INVESTIGATION OF GAPLESS STATE INDUCED BY PRESSURE IN HG1-XCDXTE ALLOYS

被引：10

作者：

BRANDT, NB

BELOUSOVA, ON

PONOMAREV, YG

ANDERSON, JR

机构：

[1] UNIV MARYLAND,DEPT PHYS,COLLEGE PK,MD

[2] MOSCOW STATE UNIV,PHYS DEPT,LOW TEMP PHYS SECT,MOSCOW,USSR

来源：

关键词：

D O I：

10.1007/BF00655271

中图分类号：

O59 [应用物理学];

学科分类号：

摘要：

引用

页码：471 / 490

页数：20

共 26 条

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[4] BRANDT NB, 1973, 3 VSES S POL POL, P3
[5] BRANDT NB, 1970, PRIB TEKH EKSP, P240
[6] ELECTRICAL TRANSPORT PROPERTIES OF SEMICONDUCTING CDXHG1-XTE ALLOYS
ELLIOTT, CT
SPAIN, IL
[J]. SOLID STATE COMMUNICATIONS, 1970, 8 (24) : 2063 - &
[7] PRESSURE-DEPENDENCE OF CARRIER CONCENTRATIONS IN P-TYPE ALLOYS OF HG1-XCDXTE AT 4.2 AND 77 DEGREES K
ELLIOTT, CT
MELNGAIL.J
HARMAN, TC
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KERNAN, WC
[J]. PHYSICAL REVIEW B, 1972, 5 (08): : 2985 - &
[8] FINK C, 1972, 11 P INT C PHYS SEM, V2, P944
[9] Gel'mont B. L., 1971, Fizika i Tekhnika Poluprovodnikov, V5, P266
[10] GELMONT BL, 1972, ZH EKSP TEOR FIZ+, V62, P713