(2X2) RECONSTRUCTIONS OF THE (111) POLAR SURFACES OF GAAS

被引：38

作者：

KAXIRAS, E ^{[1
]}

BARYAM, Y ^{[1
]}

JOANNOPOULOS, JD ^{[1
]}

PANDEY, KC ^{[1
]}

机构：

[1] IBM CORP,THOMAS J WATSON RES CTR,YORKTOWN HTS,NY 10598

来源：

PHYSICAL REVIEW B | 1986年 / 33卷 / 06期

关键词：

D O I：

10.1103/PhysRevB.33.4406

中图分类号：

T [工业技术];

学科分类号：

08 ;

摘要：

引用

页码：4406 / 4409

页数：4

共 19 条

[1] MODEL-INDEPENDENT STRUCTURE DETERMINATION OF THE INSB(111)2X2 SURFACE WITH USE OF SYNCHROTRON X-RAY-DIFFRACTION [J].

BOHR, J ;

FEIDENHANSL, R ;

NIELSEN, M ;

TONEY, M ;

JOHNSON, RL ;

ROBINSON, IK .

PHYSICAL REVIEW LETTERS, 1985, 54 (12) :1275-1278

[2] COMPARISON BETWEEN THE ELECTRONIC-STRUCTURES OF GAAS(111) AND GAAS(111) FROM ANGLE-RESOLVED PHOTOEMISSION [J].

BRINGANS, RD ;

BACHRACH, RZ .

PHYSICAL REVIEW LETTERS, 1984, 53 (20) :1954-1957

[3] VACANCY-INDUCED 2X2 RECONSTRUCTION OF THE GA(111) SURFACE OF GAAS [J].

CHADI, DJ .

PHYSICAL REVIEW LETTERS, 1984, 52 (21) :1911-1914

[4]

CHADI DJ, UNPUB J VAC SCI TECH

[5]

Cho A. Y., 1975, Progress in Solid State Chemistry, V10, P157, DOI 10.1016/0079-6786(75)90005-9

[6] SURFACE STRUCTURES AND PHOTOLUMINESCENCE OF MOLECULAR BEAM EPITAXIAL FILMS OF GAAS [J].

CHO, AY ;

HAYASHI, I .

SOLID-STATE ELECTRONICS, 1971, 14 (02) :125-&

[7] NORM-CONSERVING PSEUDOPOTENTIALS [J].

HAMANN, DR ;

SCHLUTER, M ;

CHIANG, C .

PHYSICAL REVIEW LETTERS, 1979, 43 (20) :1494-1497

[8] SURFACE STRUCTURES AND PROPERTIES OF DIAMOND-STRUCTURE SEMICONDUCTORS [J].

HANEMAN, D .

PHYSICAL REVIEW, 1961, 121 (04) :1093-&

[9]

HARRISON WA, 1979, J VAC SCI TECHNOL, V16, P1792

[10]

Hultgren RR, 1973, SELECTED VALUES THER

← 1 2 →