METALORGANIC MOLECULAR-BEAM EPITAXIAL-GROWTH OF ZNSE USING DIETHYLZINC AND DIETHYLSELENIDE

被引：24

作者：

ANDO, H

TAIKE, A

KIMURA, R

KONAGAI, M

TAKAHASHI, K

机构：

[1] Tokyo Inst of Technology, Tokyo, Jpn, Tokyo Inst of Technology, Tokyo, Jpn

来源：

JAPANESE JOURNAL OF APPLIED PHYSICS PART 2-LETTERS | 1986年 / 25卷 / 04期

关键词：

MOLECULAR BEAM EPITAXY - Applications - PHOTOLUMINESCENCE - Measurements - SEMICONDUCTING FILMS - Growth - SEMICONDUCTING GALLIUM ARSENIDE - SUBSTRATES;

D O I：

10.1143/JJAP.25.L279

中图分类号：

O59 [应用物理学];

学科分类号：

摘要：

ZnSe epitaxial layers have been grown for the first time on (100) GaAs substrates by metalorganic molecular beam epitaxy using diethylzinc and diethylselenide. Diethylselenide is cracked by the cracking furnace. Smooth single-crystalline layers can be grown at substrate temperatures above 200 degree C. Photoluminescence spectra vary noticeably with the substrate temperature. Above 400 degree C, the spectra measured at 71 K were dominated by intense blue donor-acceptor pair bands, and broad luminescence bands at longer wavelengths were weak.

引用

页码：L279 / L281

页数：3