NOISE ANALYSIS FOR A SILICON PARTICLE DETECTOR WITH INTERNAL MULTIPLICATION

被引：10

作者：

HAITZ, RH

SMITS, FM

机构：

来源：

IEEE TRANSACTIONS ON NUCLEAR SCIENCE | 1966年 / NS13卷 / 03期

关键词：

D O I：

10.1109/TNS.1966.4324099

中图分类号：

TM [电工技术]; TN [电子技术、通信技术];

学科分类号：

0808 ; 0809 ;

摘要：

引用

页码：198 / +

页数：1

共 14 条

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APPLIED PHYSICS LETTERS, 1965, 6 (04) :62-+

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[3]

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[4] AVALANCHE EFFECTS IN SILICON P-N JUNCTIONS .2. STRUCTURALLY PERFECT JUNCTIONS [J].

GOETZBERGER, A ;

SCARLETT, RM ;

HAITZ, RH ;

MCDONALD, B .

JOURNAL OF APPLIED PHYSICS, 1963, 34 (06) :1591-+

[5]

HAITZ RH, TO BE PUBLISHED

[6]

HANSEN W, 871 NAT AC SCI PUBL, P202

[7] HIGH-SPEED PHOTODIODE SIGNAL ENHANCEMENT AT AVALANCHE BREAKDOWN VOLTAGE [J].

JOHNSON, KM .

IEEE TRANSACTIONS ON ELECTRON DEVICES, 1965, ED12 (02) :55-+

[8]

LYNCH WT, 1965, INTERNATIONAL ELECTR

[9]

MCINTYRE RJ, 1965, SOLID STATE DEVICE R

[10]

MELCHIOR H, 1965, INTERNATIONAL ELECTR

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