A THEORETICAL CALCULATION ON SCHOTTKY DEFECTS IN AGCL

被引:7
作者
BANHATTI, RD [1 ]
MURTI, YVGS [1 ]
LASKAR, AL [1 ]
机构
[1] CLEMSON UNIV,DEPT PHYS,CLEMSON,SC 29631
来源
PHYSICA STATUS SOLIDI B-BASIC RESEARCH | 1991年 / 164卷 / 02期
关键词
D O I
10.1002/pssb.2221640204
中图分类号
O469 [凝聚态物理学];
学科分类号
070205 ;
摘要
The formation of Schottky defects in crystalline AgCl is investigated using interatomic potentials compatible with the macroscopic dielectric response of the solid with consistent van der Waals interaction coefficients. It is shown that two-body central interactions in a point dipole model can yield satisfactory defect formation energy provided the dielectric polarization of the distorted defect crystal is adequately simulated. The calculated formation energy of the Schottky defect is 2.0 eV according to the potential that includes dipole-quadrupole van der Waals forces. The variation of the defect energy with temperature is studied in a quasiharmonic approximation.
引用
收藏
页码:357 / 367
页数:11
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