STUDIES OF THE SURFACE-STRUCTURES FORMED BY THE ALTERNATED ELECTRODEPOSITION OF CD AND TE ON THE LOW-INDEX PLANES OF AU .2. STM STUDIES

被引:69
作者
SUGGS, DW [1 ]
STICKNEY, JL [1 ]
机构
[1] UNIV GEORGIA,DEPT CHEM,ATHENS,GA 30602
基金
美国国家科学基金会;
关键词
D O I
10.1016/0039-6028(93)90720-5
中图分类号
O64 [物理化学(理论化学)、化学物理学];
学科分类号
070304 ; 081704 ;
摘要
Scanning tunneling microscopy (STM) studies of the alternated deposition of Te and Cd atomic layers on the low-index planes of Au are presented here. These investigations were designed to gain an understanding of the surface chemistry involved in the deposition of CdTe by electrochemical atomic layer epitaxy (ECALE). ECALE is the electrochemical analog of atomic layer epitaxy (ALE). In the present study, the structures formed by the alternated electrodeposition of Te and Cd atomic layers, at underpotential, were examined by STM on the low-index planes of Au. Deposition of atomic layers of each element were achieved by underpotential deposition (UPD). Studies of the UPD of Cd by STM were not performed due to Cd's instability in aqueous solutions after withdrawal from solution and loss of potential control. Studies of Te UPD were performed, however, since Te is stable in aqueous media without potential control. Ordered Te structures were observed using STM on all three Au low-index planes. Atomic resolution imaging of Cd UPD on Te atomic layers proved more difficult than imaging simple Te deposits, however, ordered CdTe structures were observed on each Au plane. Higher bias voltages were generally required to image the CdTe deposits. On Au(100) the CdTe deposit appears to adopt a structure equivalent to a (100) slice of bulk CdTe (zinc blende), but contracted 10% due to the lattice missmatch on the Au surfaces. Similar structures were observed on the other two low index planes, as well; although Cd-Cd distances were closer to those found in bulk CdTe.
引用
收藏
页码:375 / 387
页数:13
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