ION-IMPLANTED SEMICONDUCTOR-DEVICES

被引：42

作者：

LEE, DH

MAYER, JW

机构：

[1] CALTECH, DEPT ELECT ENGN, PASADENA, CA 91109 USA

[2] HUGHES RES LABS, MALIBU, CA 90265 USA

来源：

PROCEEDINGS OF THE IEEE | 1974年 / 62卷 / 09期

关键词：

D O I：

10.1109/PROC.1974.9603

中图分类号：

TM [电工技术]; TN [电子技术、通信技术];

学科分类号：

0808 ; 0809 ;

摘要：

引用

页码：1241 / 1255

页数：15

共 129 条

[1]

AUBUCHON KG, 1969, P INT C PROPERTIES U, P575

[2] MICROWAVE CHARACTERISTICS OF ION-IMPLANTED BIPOLAR TRANSISTORS [J].

BARNOSKI, MK ;

LOPER, DD .

SOLID-STATE ELECTRONICS, 1973, 16 (04) :441-&

[3] ION-IMPLANTED BIPOLAR TRANSISTOR CARRIER CONCENTRATION PROFILES [J].

BARNOSKI, MK ;

LOPER, DD .

SOLID-STATE ELECTRONICS, 1973, 16 (04) :433-&

[4]

BARNOSKI MK, 1974, NEW ORLEANS INT OPTI

[5]

BAUER LO, 1971, 2 P INT C ION IMPL, P70

[6]

BLAMIRES NG, 1968, PHYS LETT A, VA 28, P178, DOI 10.1016/0375-9601(68)90186-2

[7]

BLOOD P, 1973, ION IMPLANTATION SEM

[8] DEFECTS IN ARSENIC-IMPLANTED P-N-JUNCTIONS [J].

BOGARDUS, EH ;

POPONIAK, MR .

APPLIED PHYSICS LETTERS, 1973, 23 (10) :553-555

[9] MOS FIELD EFFECT TRANSISTORS FORMED BY GATE MASKED ION IMPLANTATION [J].

BOWER, RW ;

DILL, HG ;

AUBUCHON, KG ;

THOMPSON, SA .

IEEE TRANSACTIONS ON ELECTRON DEVICES, 1968, ED15 (10) :757-&

[10]

BRICE DK, PRIVATE COMMUNICATIO

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