CURRENT OSCILLATIONS IN CDS CAUSED BY ACOUSTOELECTRIC DOMAIN MOTION

被引：5

作者：

ISHIDA, A

INUISHI, Y

机构：

来源：

IEEE TRANSACTIONS ON ELECTRON DEVICES | 1967年 / ED14卷 / 09期

关键词：

D O I：

10.1109/T-ED.1967.16011

中图分类号：

TM [电工技术]; TN [电子技术、通信技术];

学科分类号：

0808 ; 0809 ;

摘要：

引用

页码：600 / &

共 26 条

[1]

BRAY R, 1966, P INT C SEMICONDUCTO, P483

[2] EFFECT OF PHONON DRIFT ON LOW TEMPERATURE CONDUCTION IN SEMICONDUCTORS [J].

CONWELL, E .

PHYSICS LETTERS, 1964, 13 (04) :285-287

[3] HIGH FIELD DOMAINS IN CADMIUM SULFIDE [J].

HAYDL, WH ;

QUATE, CF .

PHYSICS LETTERS, 1966, 20 (05) :463-+

[4] HIGH FIELD DOMAINS IN N-TYPE CADMIUM SULPHIDE [J].

HAYDL, WH .

APPLIED PHYSICS LETTERS, 1967, 10 (02) :36-&

[5] CURRENT OSCILLATIONS IN GaAs UNDER ACOUSTIC AMPLIFICATION CONDITIONS [J].

Hervouet, C. ;

Lebailly, J. ;

Hugon, P. Leroux ;

Veilex, R. .

SOLID STATE COMMUNICATIONS, 1965, 3 (12) :413-415

[6]

HOBSON GS, 1966, SEP P INT C PHYS SEM, P464

[7] LIFE TIME MEASUREMENT OF AMPLIFIED PHONONS IN HIGH FIELD DOMAIN OF CDS [J].

ISHIDA, A ;

INUISHI, Y .

SOLID STATE COMMUNICATIONS, 1967, 5 (04) :217-&

[8] CURRENT OSCILLATIONS AND HIGH FIELD DOMAINS IN DARK CONDUCTIVE CDS CRYSTALS - (FIELD DEPENDENCE OF PHONON BUILDUP TIME - CRYSTAL LENGTH DEPENDENCE OF DOMAIN TRANSIT TIME - PIEZOELECTRICS - VOLTAGE-CONTROLLED NEGATIVE RESISTANCE - E/T) [J].

ISHIDA, A ;

INUISHI, Y .

APPLIED PHYSICS LETTERS, 1966, 8 (09) :235-+

[9] POTENTIAL PROBE MEASUREMENTS ALONG CURRENT-OSCILLATING CDS CRYSTALS [J].

ISHIDA, A ;

HAMAGUCHI, C ;

INUISHI, Y .

JOURNAL OF THE PHYSICAL SOCIETY OF JAPAN, 1966, 21 (01) :186-+

[10] CURRENT SATURATION ASSOCIATED WITH ULTRASONIC AMPLIFICATION IN CDS CRYSTALS [J].

ISHIDA, A ;

HAMAGUCHI, C ;

INUISHI, Y .

JOURNAL OF THE PHYSICAL SOCIETY OF JAPAN, 1965, 20 (10) :1946-+

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