STATIC INDUCTION TRANSISTORS OPTIMIZED FOR HIGH-VOLTAGE OPERATION AND HIGH MICROWAVE-POWER OUTPUT

被引：29

作者：

BENCUYA, I ^{[1
]}

COGAN, AI ^{[1
]}

BUTLER, SJ ^{[1
]}

REGAN, RJ ^{[1
]}

机构：

[1] GTE LABS INC,WALTHAM,MA 02254

来源：

IEEE TRANSACTIONS ON ELECTRON DEVICES | 1985年 / 32卷 / 07期

关键词：

D O I：

10.1109/T-ED.1985.22118

中图分类号：

TM [电工技术]; TN [电子技术、通信技术];

学科分类号：

0808 ; 0809 ;

摘要：

引用

页码：1321 / 1327

页数：7

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ALLEY, GD .

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[4]

Cogan A., 1983, International Electron Devices Meeting 1983. Technical Digest, P221

[5]

COGAN AI, 1980, 38TH P DEV RES C

[6]

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[7] CHARACTERISTICS OF HIGH-POWER AND HIGH-BREAKDOWN-VOLTAGE STATIC INDUCTION TRANSISTOR WITH THE HIGH MAXIMUM FREQUENCY OF OSCILLATION [J].

KOTANI, M ;

HIGAKI, Y ;

KATO, M ;

YUKIMOTO, Y .

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[8]

MOSS D, 1983, MICROWAVES RF FEB

[9]

NISHIZAWA J, 1982, SEMICONDUCTOR TECHNO

[10]

NISHIZAWA J, 1982, SEMICONDUCTOR TECHNO, P213

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