MOBILITY OF N-TYPE PBTE FOR TEMPERATURES BELOW 50 K

被引：4

作者：

GRANGER, R

LASBLEY, A

PELLETIER, CM

ROLLAND, S

机构：

来源：

JOURNAL DE PHYSIQUE | 1985年 / 46卷 / 07期

关键词：

D O I：

10.1051/jphys:019850046070118500

中图分类号：

学科分类号：

摘要：

引用

页码：1185 / 1192

页数：8

共 24 条

[1]

Bauer G., 1978, Proceedings of the International Conference on Lattice Dynamics, P669

[2] ENERGY BANDS, EFFECTIVE MASSES AND G-FACTORS OF LEAD SALTS AND SNTE [J].

BERNICK, RL ;

KLEINMAN, L .

SOLID STATE COMMUNICATIONS, 1970, 8 (07) :569-&

[3]

CONWELL EM, 1967, HIGH FIELD TRANSPORT, P107

[4]

Gresslehner K. H., 1978, Physics of Narrow Gap Semiconductors, P205

[5] LOW-TEMPERATURE ELECTRICAL TRANSPORT IN NORMAL-TYPE LEAD-TELLURIDE [J].

LASBLEY, A ;

GRANGER, R ;

PELLETIER, CM ;

ROLLAND, S .

PHYSICS LETTERS A, 1980, 77 (04) :289-291

[6] MOBILITY VARIATION CALCULATION IN N-TYPE PBTE BETWEEN 50 AND 300 K [J].

LASBLEY, A ;

GRANGER, R ;

PELLETIER, CM ;

ROLLAND, S .

JOURNAL DE PHYSIQUE, 1985, 46 (01) :43-53

[7]

LIN PJ, 1965, PHYS REV, V142, P478

[8] CARRIER RECOMBINATION AND DEEP LEVELS IN PBTE [J].

LISCHKA, K ;

HUBER, W .

SOLID-STATE ELECTRONICS, 1978, 21 (11-1) :1509-1512

[9]

Logothetis E. M., 1970, Solid State Communications, V8, P1937, DOI 10.1016/0038-1098(70)90663-0

[10]

MATZ D, 1968, PHYS REV, V168, P3

← 1 2 3 →