MEASUREMENT BY CATHODOLUMINESCENCE SPECTROSCOPY OF EPITAXIAL LAYER COMPOSITIONS IN (AL, GA) AS DOUBLE HETEROSTRUCTURES

被引：5

作者：

GAW, CA

SWAMINATHAN, V

机构：

[1] AT&T BELL LABS,READING,PA 19604

[2] AT&T BELL LABS,MURRAY HILL,NJ 07974

来源：

MATERIALS LETTERS | 1985年 / 3卷 / 04期

关键词：

D O I：

10.1016/0167-577X(85)90147-8

中图分类号：

T [工业技术];

学科分类号：

08 ;

摘要：

引用

页码：145 / 150

页数：6

共 13 条

[1]

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[2]

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[6]

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[7]

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[9] FREE-TO-BOUND TRANSITIONS IN SI-DOPED EPITAXIAL GA1-XALXAS [J].

SWAMINATHAN, V ;

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ZILKO, JL .

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[10] PHOTO-LUMINESCENCE STUDY OF ACCEPTORS IN ALXGA1-XAS [J].

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