A LONG-WAVELENGTH, ANNULAR IN0.53GA0.47AS P-I-N PHOTODETECTOR

被引：6

作者：

FORREST, SR ^{[1
]}

KOHL, PA ^{[1
]}

PANOCK, R ^{[1
]}

DEWINTER, JC ^{[1
]}

NAHORY, RE ^{[1
]}

YANOWSKI, E ^{[1
]}

机构：

[1] BELL TEL LABS INC, HOLMDEL, NJ 07733 USA

来源：

ELECTRON DEVICE LETTERS | 1982年 / 3卷 / 12期

关键词：

D O I：

10.1109/EDL.1982.25619

中图分类号：

TM [电工技术]; TN [电子技术、通信技术];

学科分类号：

0808 ; 0809 ;

摘要：

引用

页码：415 / 417

页数：3

共 8 条

[1]

BALLMAN AA, UNPUB

[2] IN0.53GA0.47AS PHOTO-DIODES WITH DARK CURRENT LIMITED BY GENERATION-RECOMBINATION AND TUNNELING [J].

FORREST, SR ;

LEHENY, RF ;

NAHORY, RE ;

POLLACK, MA .

APPLIED PHYSICS LETTERS, 1980, 37 (03) :322-325

[3] SMALL AREA INGAAS-INP P-I-N PHOTO-DIODES - FABRICATION, CHARACTERISTICS AND PERFORMANCE OF DEVICES IN 274-MB-S AND 45-MB-S LIGHTWAVE RECEIVERS AT 1.31 MU-M WAVELENGTH [J].

LEE, TP ;

BURRUS, CA ;

DENTAI, AG ;

OGAWA, K .

ELECTRONICS LETTERS, 1980, 16 (04) :155-156

[4]

LEHENY RF, 1979, ELECTRON LETT, V15, P713, DOI 10.1049/el:19790507

[5]

MULLER J, 1977, 3RD P EUR C OPT COMM, P173

[6] PHOTOELECTROCHEMICAL ETCHING OF PARA-GAAS [J].

OSTERMAYER, FW ;

KOHL, PA .

APPLIED PHYSICS LETTERS, 1981, 39 (01) :76-78

[7] GA0.47IN0.53AS HOMOJUNCTION PHOTO-DIODE - NEW AVALANCHE PHOTODETECTOR IN NEAR-INFRARED BETWEEN 1.0 AND 1.6 MU-M [J].

PEARSALL, TP ;

PAPUCHON, M .

APPLIED PHYSICS LETTERS, 1978, 33 (07) :640-642

[8] LIQUID-PHASE EPITAXIAL IN1-XGAXASYP1-Y LATTICE MATCHED TO (100) INP OVER COMPLETE WAVELENGTH RANGE 0.92 GREATER-THAN-LAMBDA-EQUAL-TO-1.65 MU-M [J].

POLLACK, MA ;

NAHORY, RE ;

DEWINTER, JC ;

BALLMAN, AA .

APPLIED PHYSICS LETTERS, 1978, 33 (04) :314-316

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