BONDING AND ANTIBONDING POTENTIALS IN GROUP-IV SEMICONDUCTORS

被引：6

作者：

KEYES, RW ^{[1
]}

机构：

[1] IBM CORP, THOMAS J WATSON RES CTR, YORKTOWN HTS, NY 10598 USA

来源：

关键词：

D O I：

10.1103/PhysRevLett.34.1334

中图分类号：

O4 [物理学];

学科分类号：

0702 ;

摘要：

引用

页码：1334 / 1337

页数：4

共 18 条

ANDERSON, OL .

[2]

COULSON CA, 1952, VALENCE, P195

[3]

FULLER ER, 1973, THESIS U ILLINOIS

[4] VARIATION OF DIELECTRIC CONSTANT OF DIAMOND WITH PRESSURE [J].

GIBBS, DF ;

HILL, GJ .

PHILOSOPHICAL MAGAZINE, 1964, 9 (99) :367-&

[5] BOND-ORBITAL MODEL .2. [J].

HARRISON, WA ;

CIRACI, S .

PHYSICAL REVIEW B, 1974, 10 (04) :1516-1527

HARRISON, WA .

PHYSICAL REVIEW B, 1973, 8 (10) :4487-4498

[7]

Keyes R. W., 1970, Comments on Solid State Physics, V3, P70

[8] ELASTIC PROPERTIES OF DIAMOND-TYPE SEMICONDUCTORS [J].

KEYES, RW .

[9]

KEYES RW, 1958, NATURE, V182, P1971

[10] MORSE POTENTIALS FOR EXCITED STATES OF DIATOMIC MOLECULES [J].

KEYS, RW .