TEMPERATURE DEPENDENCE OF FUNDAMENTAL AND OVERTONE ABSORPTION BANDS OF PHOSPHORUS-DOPED GAAS

被引:6
作者
KLEINMAN, L
PRYCE, MHL
SPITZER, WG
机构
关键词
D O I
10.1103/PhysRevLett.17.304
中图分类号
O4 [物理学];
学科分类号
0702 ;
摘要
引用
收藏
页码:304 / &
相关论文
共 5 条
[1]   INFRARED STUDY OF LOCALIZED VIBRATIONS IN SILICON DUE TO BORON AND LITHIUM [J].
BALKANSKI, M ;
NAZAREWICZ, W .
JOURNAL OF PHYSICS AND CHEMISTRY OF SOLIDS, 1966, 27 (04) :671-+
[2]  
CHEN YC, TO BE PUBLISHED
[3]  
ELLIOTT RJ, 1965, P ROY SOC LONDON, VA289, P1
[4]   LOCAL-MODE RESONANCE - AN OPTICAL ANALOG OF MOSSBAUER EFFECT [J].
MITRA, SS ;
SINGH, RS .
PHYSICAL REVIEW LETTERS, 1966, 16 (16) :694-&
[5]   INFRARED COMBINATION MODE ABSORPTION IN LITHIUM-BORON-DOPED SILICON [J].
WALDNER, M ;
HILLER, MA ;
SPITZER, WG .
PHYSICAL REVIEW, 1965, 140 (1A) :A172-&