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OXIDATION OF SI(100) SURFACES WITH BI AND AG OVERLAYERS

被引：4
作者：
YAMADA, T
ABE, H
机构：
[1] Research Laboratory, OKI Electric Industry Co Ltd., Hachiouji-shi, Tokyo, 193, 550-5, Higashiasakawa-cho
来源：
JAPANESE JOURNAL OF APPLIED PHYSICS PART 2-LETTERS & EXPRESS LETTERS | 1990年 / 29卷 / 07期
关键词：
Auger electron spectroscopy; Growth mode; Heat treatment; Oxidation; Oxide superconductor; Reflection high-energy electron diffraction; Surface; Thin film;
D O I：
10.1143/JJAP.29.L1192
中图分类号：
O59 [应用物理学];
学科分类号：
摘要：
Desorption of Bi and Ag deposited on Si(100) surfaces has been investigated by Auger electron spectroscopy for heat treatment in an oxygen atmosphere. Bi was desorbed from the Si surface at substrate temperature Ts of 450∼500°C, and Ag was desorbed at Ts of 510∼560°C. The RHEED patterns for Ag overlayers before the desorption suggest that Ag atoms rearrange in the [011] direction. © 1990 The Japan Society of Applied Physics.
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页码：L1192 / L1195
页数：4
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