ANTIPHASE BOUNDARIES OF GAAS ON SI

被引：4

作者：

ITOH, Y

MORI, H

YAMAGUCHI, M

机构：

[1] Nippon Telegraph and Telephone Corporation, Optoelectronics Laboratories, Atsugi, Kanagawa, 243-01, Morinosato Wakamiya

来源：

JOURNAL OF CRYSTAL GROWTH | 1990年 / 103卷 / 1-4期

关键词：

D O I：

10.1016/0022-0248(90)90212-4

中图分类号：

O7 [晶体学];

学科分类号：

0702 ; 070205 ; 0703 ; 080501 ;

摘要：

We have examined the formation of the anti-phase boundary of GaAs films grown on lens-shaped Si substrates by low pressure metalorganic chemical vapor deposition. The pattern of the anti-phase boundary shows four-fold symmetry and changes depending on thermal cleaning conditions (atmosphere and temperature) of the Si substrates. It has been found that the creation of anti-phase boundaries is governed by the Si surface step structure and that As plays an important role in the formation of double-layer step. © 1990.

引用

页码：363 / 366

页数：4

共 15 条

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