MORPHOLOGY OF GAAS AND INP (001) SUBSTRATES AFTER DIFFERENT PREPARATION PROCEDURES PRIOR TO EPITAXIAL-GROWTH

被引：10

作者：

SALETES, A

TURCO, F

MASSIES, J

CONTOUR, JP

机构：

[1] CNRS-Sophia Antipolis, Valbonne, Fr, CNRS-Sophia Antipolis, Valbonne, Fr

来源：

JOURNAL OF THE ELECTROCHEMICAL SOCIETY | 1988年 / 135卷 / 02期

关键词：

D O I：

10.1149/1.2095645

中图分类号：

O646 [电化学、电解、磁化学];

学科分类号：

081704 ;

摘要：

引用

页码：504 / 509

页数：6

共 28 条

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[5] SOURCE AND ELIMINATION OF OVAL DEFECTS ON GAAS FILMS GROWN BY MOLECULAR-BEAM EPITAXY [J].

CHAI, YG ;

CHOW, R .

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[6]

Cho A. Y., 1976, U.S. patent, Patent No. [3,969,164, 3969164]

[7] GROWTH OF III-V SEMICONDUCTORS BY MOLECULAR-BEAM EPITAXY AND THEIR PROPERTIES [J].

CHO, AY .

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[8] X-RAY PHOTOELECTRON-SPECTROSCOPY STUDY OF GAAS (001) AND INP (001) CLEANING PROCEDURES PRIOR TO MOLECULAR-BEAM EPITAXY [J].

CONTOUR, JP ;

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JAPANESE JOURNAL OF APPLIED PHYSICS PART 2-LETTERS, 1985, 24 (07) :L563-L565

[9]

CONTOUR JP, 1986, 7TH P MBE US WORKSH

[10]

DAVITAYA FA, COMMUNICATION

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