INSITU GROWTH OF DYBA2CU3O7-X THIN-FILMS BY MOLECULAR-BEAM EPITAXY

被引：55

作者：

JOHNSON, BR ^{[1
]}

BEAUCHAMP, KM ^{[1
]}

WANG, T ^{[1
]}

LIU, JX ^{[1
]}

MCGREER, KA ^{[1
]}

WAN, JC ^{[1
]}

TUOMINEN, M ^{[1
]}

ZHANG, YJ ^{[1
]}

MECARTNEY, ML ^{[1
]}

GOLDMAN, AM ^{[1
]}

机构：

[1] UNIV MINNESOTA,CTR SCI & APPLICAT SUPERCOND,DEPT CHEM ENGN & MAT SCI,MINNEAPOLIS,MN 55455

来源：

APPLIED PHYSICS LETTERS | 1990年 / 56卷 / 19期

关键词：

D O I：

10.1063/1.103225

中图分类号：

O59 [应用物理学];

学科分类号：

摘要：

Films of DyBa2Cu3O7-x with transition temperatures as high as 89 K and with nominal thicknesses down to 35 Å have been grown in situ using molecular beam epitaxy employing ozone as a source of reactive oxygen. The process has been successful with a variety of substrates including SrTiO3(100), SrTiO3(110), LaAlO 3(100), MgO(100), and yttria-stabilized zirconia. The films could be imaged with a scanning tunneling microscope at 4.2 K, indicating a conducting surface even at low temperatures.

引用

页码：1911 / 1913

页数：3

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