HIGH-FIELD MAGNETORESISTANCE AND DEHAAS-VANALPHEN EFFECT IN LAIN3

被引：41

作者：

UMEHARA, I

NAGAI, N

ONUKI, Y

机构：

[1] Institute of Materials Science, University of Tsukuba, Tsukuba

来源：

JOURNAL OF THE PHYSICAL SOCIETY OF JAPAN | 1991年 / 60卷 / 02期

关键词：

LAIN3; FERMI SURFACE; MAGNETORESISTANCE; DEHAASVANALPHEN EFFECT;

D O I：

10.1143/JPSJ.60.591

中图分类号：

O4 [物理学];

学科分类号：

0702 ;

摘要：

We have measured the magnetoresistance and the de Haas-van Alphen (dHvA) effect in LaIn3. The magnetoresistance increases in the all field directions, indicating that this material is a compensated metal without open orbits. About ten dHvA branches have been detected in the frequency range of 9.5 x 10(5) Oe to 7 x 10(7) Oe, which are almost explained by the APW band calculation done by Hasegawa.

引用

页码：591 / 594

页数：4

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[8]

COMMUNICATION

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