PHOTO-VOLTAIC PROPERTIES OF ZNSE-GAAS HETEROJUNCTIONS

被引：4

作者：

BESOMI, P ^{[1
]}

CHRISTIANSON, K ^{[1
]}

WESSELS, BW ^{[1
]}

机构：

[1] NORTHWESTERN UNIV,MAT RES CTR,EVANSTON,IL 60201

来源：

THIN SOLID FILMS | 1982年 / 87卷 / 02期

关键词：

D O I：

10.1016/0040-6090(82)90265-6

中图分类号：

T [工业技术];

学科分类号：

08 ;

摘要：

引用

页码：113 / 118

页数：6

共 10 条

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[2] HIGH-CONDUCTIVITY HETERO-EPITAXIAL ZNSE FILMS [J].

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APPLIED PHYSICS LETTERS, 1980, 37 (10) :955-957

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[4] PHOTOVOLTAIC PROPERTIES OF 5 II-VI HETEROJUNCTIONS [J].

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[5]

GAUGASH PV, 1976, SOV PHYS SEMICOND, V9, P1239

[6]

LEIGH W, 1982, J APPL PHYS, V53

[7]

Mach R., 1970, Physica Status Solidi A, V2, P701, DOI 10.1002/pssa.19700020405

[8]

Milnes AG, 1972, HETEROJUNCTIONS META

[9] PHOTOELECTRIC PROPERTIES OF ZNSE-GAAS HETEROJUNCTIONS PREPARED BY THE CLOSE-SPACED TECHNIQUE [J].

MIZUNO, H ;

NAKAMURA, H ;

SHIRAKAWA, Y ;

KUKIMOTO, H .

JOURNAL OF APPLIED PHYSICS, 1980, 51 (11) :5855-5858

[10] HETEROJUNCTION SOLAR CELL CALCULATIONS [J].

SAHAI, R ;

MILNES, AG .

SOLID-STATE ELECTRONICS, 1970, 13 (09) :1289-&

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