DISAPPEARANCE OF THE BREAKDOWN OF QUANTUM HALL-EFFECTS IN SHORT DEVICES

被引：33

作者：

KAWAGUCHI, Y ^{[1
]}

HAYASHI, F ^{[1
]}

KOMIYAMA, S ^{[1
]}

OSADA, T ^{[1
]}

SHIRAKI, Y ^{[1
]}

ITOH, R ^{[1
]}

机构：

[1] UNIV TOKYO,ADV SCI & TECHNOL RES CTR,MEGURO KU,TOKYO 153,JAPAN

来源：

JAPANESE JOURNAL OF APPLIED PHYSICS PART 1-REGULAR PAPERS SHORT NOTES & REVIEW PAPERS | 1995年 / 34卷 / 8B期

关键词：

INTEGER QUANTUM HALL EFFECT; BREAKDOWN OF QUANTUM HALL EFFECT; DEVICE-LENGTH DEPENDENCE; DEVICE-WIDTH DEPENDENCE; ELECTRON HEATING; CARRIER MULTIPLICATION;

D O I：

10.1143/JJAP.34.4309

中图分类号：

O59 [应用物理学];

学科分类号：

摘要：

Device-length dependence of the breakdown of the integer quantum Hall effects is studied by using devices with narrow constricted regions of different lengths L at T = 1.5-4.2 K and Landau-level filling factors of nu = 2, 4 and 6. Samples are fabricated from GaAs/AlGaAs heterostructures. Sharp increase in the diagonal resistance R(x) at a critical current disappears, and is replaced by a continuous and gradual increase in short constricted regions of L < 30 mu m. The observed L-dependence supports an avalanche-type carrier multiplication mechanism triggered by electron-superheating.

引用

页码：4309 / 4312

页数：4

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