ELECTRICAL STUDIES ON (MO/W)SE-2 SINGLE-CRYSTALS .2. TEMPERATURE-DEPENDENCE OF HALL-EFFECT

被引：4

作者：

AGARWAL, MK

PATEL, PD

VIJAYAN, O

机构：

来源：

PHYSICA STATUS SOLIDI A-APPLIED RESEARCH | 1983年 / 78卷 / 02期

关键词：

D O I：

10.1002/pssa.2210780213

中图分类号：

T [工业技术];

学科分类号：

08 ;

摘要：

引用

页码：469 / 473

页数：5

共 21 条

[1] GROWTH-CONDITIONS AND CRYSTAL-STRUCTURE PARAMETERS OF LAYER COMPOUNDS IN THE SERIES MO1-XWXSE2 [J].

AGARWAL, MK ;

WANI, PA .

MATERIALS RESEARCH BULLETIN, 1979, 14 (06) :825-830

[2] ELECTRICAL STUDIES ON (MO/W)SE-2 SINGLE-CRYSTALS .1. ELECTRICAL-RESISTIVITY [J].

AGARWAL, MK ;

PATEL, PD ;

VIJAYAN, O .

PHYSICA STATUS SOLIDI A-APPLIED RESEARCH, 1983, 78 (01) :133-136

[3]

AGARWAL MK, UNPUB INDIAN J PHYS

[4] TRANSPORT PROPERTIES OF MOTE2-X AND MOSE2-X COMPOUNDS BETWEEN 130 AND 300 DEGREES K [J].

CONAN, A ;

GOUREAUX, G ;

ZOAETER, M .

JOURNAL OF PHYSICS AND CHEMISTRY OF SOLIDS, 1975, 36 (04) :315-320

[5] TEMPERATURE-DEPENDENCE OF ELECTRICAL-CONDUCTIVITY AND HALL-COEFFICIENT IN 2H-MOS2, MOSE2, WSE2, AND MOTE2 [J].

ELMAHALAWY, SH ;

EVANS, BL .

PHYSICA STATUS SOLIDI B-BASIC SOLID STATE PHYSICS, 1977, 79 (02) :713-722

[6] OPTICAL AND ELECTRICAL PROPERTIES OF SNSE2 [J].

EVANS, BL ;

HAZELWOO.RA .

JOURNAL OF PHYSICS D-APPLIED PHYSICS, 1969, 2 (11) :1507-&

[7] THEORY OF LAYER STRUCTURES [J].

FIVAZ, R .

JOURNAL OF PHYSICS AND CHEMISTRY OF SOLIDS, 1967, 28 (05) :839-&

[8] MOBILITY OF CHARGE CARRIERS IN SEMICONDUCTING LAYER STRUCTURES [J].

FIVAZ, R ;

MOOSER, E .

PHYSICAL REVIEW, 1967, 163 (03) :743-&

[9]

FIVAZ R, 1964, PHYS REV A, V136, P833

[10]

FIVAZ RC, 1976, PHYSICS CHEM MATERIA, V4, P343

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