INFLUENCE OF AN ELECTRIC-FIELD ON BEAM-INDUCED ADHESION ENHANCEMENT

被引：14

作者：

SAIHALASZ, GA

GAZECKI, G

机构：

来源：

APPLIED PHYSICS LETTERS | 1984年 / 45卷 / 10期

关键词：

D O I：

10.1063/1.95071

中图分类号：

O59 [应用物理学];

学科分类号：

摘要：

引用

页码：1067 / 1069

页数：3

共 9 条

[1]

BAGLIN JEE, 1984, THIN FILMS INTERFACE

[2] MONTE-CARLO STUDIES OF THE ELECTRON-MOBILITY IN SIO2 [J].

FITTING, HJ ;

FRIEMANN, JU .

PHYSICA STATUS SOLIDI A-APPLIED RESEARCH, 1982, 69 (01) :349-358

[3]

GAZECKI G, UNPUB

[4] ION-BEAM-ENHANCED ADHESION IN THE ELECTRONIC STOPPING REGION [J].

GRIFFITH, JE ;

QIU, Y ;

TOMBRELLO, TA .

NUCLEAR INSTRUMENTS & METHODS IN PHYSICS RESEARCH, 1982, 198 (2-3) :607-609

[5] ENHANCEMENT OF THIN METALLIC FILM ADHESION FOLLOWING VACUUM ULTRAVIOLET-IRRADIATION [J].

MITCHELL, IV ;

NYBERG, G ;

ELLIMAN, RG .

APPLIED PHYSICS LETTERS, 1984, 45 (02) :137-139

[6] THIN-FILM ADHESION CHANGES INDUCED BY ELECTRON-IRRADIATION [J].

MITCHELL, IV ;

WILLIAMS, JS ;

SMITH, P ;

ELLIMAN, RG .

APPLIED PHYSICS LETTERS, 1984, 44 (02) :193-195

[7]

SOOD DK, UNPUB

[8]

SOOD DK, 1984, ION IMPLANTATION ION

[9] SURFACE MODIFICATION USING MEV ION-BEAMS [J].

TOMBRELLO, TA .

NUCLEAR INSTRUMENTS & METHODS IN PHYSICS RESEARCH, 1983, 218 (1-3) :679-683

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