PROCESS-INDUCED DEFECTS IN SOLAR-CELL SILICON

被引：9

作者：

GLEICHMANN, R ^{[1
]}

CUNNINGHAM, B ^{[1
]}

AST, DG ^{[1
]}

机构：

[1] CORNELL UNIV,DEPT MAT SCI & ENGN,ITHACA,NY 14853

来源：

关键词：

D O I：

10.1063/1.335716

中图分类号：

O59 [应用物理学];

学科分类号：

摘要：

引用

页码：223 / 229

页数：7

共 16 条

[1]

Ast D. G., 1984, Electron Microscopy of Materials Symposium, P85

[2]

Ast D. G., 1982, Grain Boundaries in Semiconductors. Proceedings of the Materials Research Society Annual Meeting, P167

[3]

CUNNINGHAM B, 1982, 40TH P ANN EMSA M WA, P434

[4]

FOELL H, 1979, PHILOS MAG A, V40, P589

[5]

GLEICHMANN R, 1985, PHILOS MAG A, V51, P449, DOI 10.1080/01418618508237566

[6]

GLEICHMANN R, UNPUB 1984 P MRS M S

[7]

HIRTH JP, 1982, THEORY DISLOCATIONS, P628

[8] EFFECT OF CREEP DEFORMATION ON STRUCTURE OF TWIN BOUNDARIES [J].

HOWELL, PR ;

NILSSON, JO ;

DUNLOP, GL .

PHILOSOPHICAL MAGAZINE A-PHYSICS OF CONDENSED MATTER STRUCTURE DEFECTS AND MECHANICAL PROPERTIES, 1978, 38 (01) :39-47

[9] HIGH-SPEED EFG OF WIDE SILICON RIBBON [J].

KALEJS, JP ;

MACKINTOSH, BH ;

SUREK, T .

[10] CHARGE COLLECTION SCANNING ELECTRON-MICROSCOPY [J].

LEAMY, HJ .