HIGH-EFFICIENCY P+-N-N+ BACK-SURFACE FIELD SILICON SOLAR-CELLS WITH VERY LARGE SHORT-CIRCUIT CURRENT DENSITIES

被引：4

作者：

NIJS, J ^{[1
]}

VANMEERBERGEN, J ^{[1
]}

DHOORE, F ^{[1
]}

MERTENS, R ^{[1
]}

VANOVERSTRAETEN, R ^{[1
]}

机构：

[1] CATHOLIC UNIV LEUVEN,ELEKTR SYST AUTOMAT & TECHNOL LAB,B-3030 HEVERLE,BELGIUM

来源：

SOLAR CELLS | 1982年 / 7卷 / 03期

关键词：

D O I：

10.1016/0379-6787(82)90056-4

中图分类号：

TE [石油、天然气工业]; TK [能源与动力工程];

学科分类号：

0807 ; 0820 ;

摘要：

引用

页码：331 / 336

页数：6

共 13 条

[1]

Brandhorst H. W. Jr., 1975, 1975 International Electron Devices Meeting. (Technical digest), P331, DOI 10.1109/IEDM.1975.188891

[2] HIGH-EFFICIENCY P+-N-N+ BACK-SURFACE-FIELD SILICON SOLAR-CELLS [J].

FOSSUM, JG ;

BURGESS, EL .

APPLIED PHYSICS LETTERS, 1978, 33 (03) :238-240

[3] CONTRIBUTION TO SILICON SOLAR CELL TECHNOLOGY [J].

GERETH, R ;

LINK, E ;

MATTES, S ;

FISCHER, H ;

PSCHUNDER, W .

ENERGY CONVERSION, 1972, 12 (03) :103-+

[4]

LINDMAYER J, 1972, 9TH P PHOT SPEC C SI

[5]

Lindmayer J, 1973, COMSAT TECH REV, V3, P1

[6] FAILURE OF ALUMINIUM CONTACTS TO SILICON IN SHALLOW DIFFUSED TRANSISTORS [J].

MCCARTHY, J .

MICROELECTRONICS RELIABILITY, 1970, 9 (02) :187-&

[7]

Nijs J., 1981, Third E.C. Photovoltaic Solar Energy Conference, P659

[8] HEAVILY DOPED TRANSPARENT-EMITTER REGIONS IN JUNCTION SOLAR-CELLS, DIODES, AND TRANSISTORS [J].

SHIBIB, MA ;

LINDHOLM, FA ;

THEREZ, F .

IEEE TRANSACTIONS ON ELECTRON DEVICES, 1979, 26 (06) :959-965

[9]

Spitzer M., 1980, Fourteenth IEEE Photovoltaic Specialists Conference 1980, P375

[10]

VANMEERBERGEN J, 1979, 2ND P COMM EUR COMM, P164

← 1 2 →