OPTICAL-PROPERTIES OF RF-SPUTTERED INDIUM OXIDE-FILMS

被引：37

作者：

SZCZYRBOWSKI, J ^{[1
]}

DIETRICH, A ^{[1
]}

HOFFMANN, H ^{[1
]}

机构：

[1] STANISLAS STASZIC ACAD MIN & MET,INST MET,DEPT SOLID STATE PHYS,PL-30059 CRACOW,POLAND

来源：

PHYSICA STATUS SOLIDI A-APPLIED RESEARCH | 1982年 / 69卷 / 01期

关键词：

D O I：

10.1002/pssa.2210690121

中图分类号：

T [工业技术];

学科分类号：

08 ;

摘要：

引用

页码：217 / 226

页数：10

共 17 条

[1]

Beckmann P., 1963, SCATTERING ELECTROMA

[2]

BENNET HE, 1967, PHYSICS THIN FILMS, V4

[3]

DIETRICH A, 1980, THESIS REGENSBURG

[4] PREPARATION OF SN-DOPED IN2O3 (ITO) FILMS AT LOW DEPOSITION TEMPERATURES BY ION-BEAM SPUTTERING [J].

FAN, JCC .

APPLIED PHYSICS LETTERS, 1979, 34 (08) :515-517

[5] EFFECT OF O2 PRESSURE DURING DEPOSITION ON PROPERTIES OF RF-SPUTTERED SN-DOPED IN2O3 FILMS [J].

FAN, JCC ;

BACHNER, FJ ;

FOLEY, GH .

APPLIED PHYSICS LETTERS, 1977, 31 (11) :773-775

[6] HF SPUTTERED INDIUM OXIDE-FILMS DOPED WITH TIN .2. REVERSIBLE AND IRREVERSIBLE TEMPERATURE-DEPENDENCE OF ELECTRICAL TRANSPORT PROPERTIES [J].

HOFFMANN, H ;

DIETRICH, A ;

PICKL, J ;

KRAUSE, D .

APPLIED PHYSICS, 1978, 16 (04) :381-390

[7] HF-SPUTTERED INDIUM OXIDE-FILMS DOPED WITH TIN .1. DEPENDENCE OF ELECTRONIC TRANSPORT ON COMPOSITION OF SPUTTER GAS AND ON OXIDATION OF SURFACE [J].

HOFFMANN, H ;

PICKL, J ;

SCHMIDT, M ;

KRAUSE, D .

APPLIED PHYSICS, 1978, 16 (03) :239-246

[8]

Jacobsson R., 1966, PROG OPT, V5

[9]

LANDOLTBORNSTEIN, 1962, ZAHLENWERTE FUNKTION, V2, P3

[10]

MCLEAN TP, 1960, PROGR SEMICOND, V5, P53

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