BONDING WIRE DISCHARGES IN INTEGRATED-CIRCUIT PACKAGES

被引：3

作者：

CROCKETT, RGM

HUGHES, JF

PUDE, JRG

SNO, HM

机构：

[1] Univ of Southampton, Dep of, Electrical Engineering, Southampton,, Engl, Univ of Southampton, Dep of Electrical Engineering, Southampton, Engl

来源：

JOURNAL OF ELECTROSTATICS | 1985年 / 16卷 / 2-3期

关键词：

ELECTRIC DISCHARGES - ELECTROSTATICS;

D O I：

10.1016/0304-3886(85)90056-7

中图分类号：

TM [电工技术]; TN [电子技术、通信技术];

学科分类号：

0808 ; 0809 ;

摘要：

Electrostatic discharge damage to semiconductor devices may occur as a result of unwanted charge entering the input circuitry. Another source of discharge damage, which has not been widely reported, is that from breakdown of corona discharging between the bonding wires and earthed track which surrounds the edge of the circuit wafer. Such discharges have been experimentally recorded, and using Townsend sparking criteria, analysis of results shows that such breakdown discharges are possible within the confines of the integrated circuit system.

引用

页码：343 / 352

页数：10