USE OF CHANNELING TECHNIQUE AND CALCULATED ANGULAR-DISTRIBUTIONS TO LOCATE BR IMPLANTED INTO FE SINGLE-CRYSTALS

被引：68

作者：

ALEXANDER, RB

CALLAGHAN, PT

POATE, JM

机构：

[1] UNIV OXFORD, CLARENDON LAB, OXFORD, ENGLAND

[2] ATOM ENERGY RES ESTAB, NUCL PHYS DIV, HARWELL, ENGLAND

[3] BELL TEL LABS INC, MURRAY HILL, NJ 07974 USA

来源：

关键词：

D O I：

10.1103/PhysRevB.9.3022

中图分类号：

T [工业技术];

学科分类号：

08 ;

摘要：

引用

页码：3022 / 3043

页数：22

共 46 条

[1] ABEL F, TO BE PUBLISHED
[2] Alexander R. B., 1970, European conference on ion implantation, P181
[3] OBSERVATION OF MULTIPLE PEAKING AND A POSSIBLE ENHANCED DIFFUSION EFFECT IN CHANNELING ANGULAR-DISTRIBUTIONS
ALEXANDER, RB
CALLAGHAN, PT
[J]. PHYSICS LETTERS A, 1973, A 45 (05) : 379 - 380
[4] INTERPRETATION OF CHANNELLED-ION BEAM MEASUREMENTS FOR FOREIGN ATOM LOCATION IN CRYSTALS
ALEXANDER, RB
DEARNALEY, G
MORGAN, DV
POATE, JM
[J]. PHYSICS LETTERS A, 1970, A 32 (05) : 365 - +
[5] ALEXANDER RB, 1971, THESIS U OXFORD
[6] ALEXANDER RB, 1973, P INT C ION IMPLANTA, P477
[7] ALEXANDER RB, 1972, RADIAT EFF, V12, P211
[8] ALEXANDER RD, UNPUBLISHED
[9] Andersen J. U., 1971, Radiation Effects, V7, P25, DOI 10.1080/00337577108232561
[10] Andersen J.U., 1972, RADIAT EFF, V12, P219