OPTICAL EVALUATION OF INDIUM GALLIUM-ARSENIDE PHOSPHIDE DOUBLE-HETEROSTRUCTURE MATERIAL FOR INJECTION-LASERS

被引：6

作者：

DEGANI, J ^{[1
]}

BESOMI, P ^{[1
]}

WILT, DP ^{[1
]}

NELSON, RJ ^{[1
]}

WILSON, RB ^{[1
]}

机构：

[1] BELL TEL LABS INC,MURRAY HILL,NJ 07974

来源：

JOURNAL OF APPLIED PHYSICS | 1983年 / 54卷 / 12期

关键词：

D O I：

10.1063/1.331981

中图分类号：

O59 [应用物理学];

学科分类号：

摘要：

引用

页码：7114 / 7118

页数：5

共 14 条

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[2]

ANTHONY PJ, UNPUB

[3]

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[4]

DEGANI J, UNPUB

[5]

HENRY CR, UNPUB

[6] SPATIALLY RESOLVED PHOTO-LUMINESCENCE CHARACTERIZATION AND OPTICALLY INDUCED DEGRADATION OF IN1-XGAXASYP1-Y DH LASER MATERIAL [J].

JOHNSTON, WD ;

EPPS, GY ;

NAHORY, RE ;

POLLACK, MA .

APPLIED PHYSICS LETTERS, 1978, 33 (12) :992-994

[7]

KIM OK, UNPUB

[8] THRESHOLD CURRENT VARIATIONS AND OPTICAL SCATTERING LOSSES IN (AL,GA)AS DOUBLE-HETEROSTRUCTURE LASERS [J].

NASH, FR ;

WAGNER, WR ;

BROWN, RL .

JOURNAL OF APPLIED PHYSICS, 1976, 47 (09) :3992-4005

[9] LASER-EXCITED PHOTOLUMINESCENCE OF 3-LAYER GAAS DOUBLE-HETEROSTRUCTURE LASER MATERIAL [J].

NASH, FR ;

DIXON, RW ;

BARNES, PA ;

SCHUMAKER, NE .

APPLIED PHYSICS LETTERS, 1975, 27 (04) :234-237

[10]

PEARSALL TP, 1981, J CRYST GROWTH, V56, P639

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