MORPHOLOGY AND RESISTIVITY OF CVD POLYCRYSTALLINE SILICON LAYERS CONTAINING CARBON

被引：3

作者：

HENDRIKS, M

RADELAAR, S

DEKEIJSER, TH

DELHEZ, R

机构：

来源：

JOURNAL DE PHYSIQUE | 1982年 / 43卷 / NC1期

关键词：

D O I：

10.1051/jphyscol:1982141

中图分类号：

学科分类号：

摘要：

引用

页码：307 / 312

页数：6

共 9 条

[1] TRANSPORT PROPERTIES OF POLYCRYSTALLINE SILICON FILMS [J].

BACCARANI, G ;

RICCO, B ;

SPADINI, G .

[2] SOLUBILITY OF CARBON IN PULLED SILICON CRYSTALS [J].

BEAN, AR ;

NEWMAN, RC .

BLOEM, J ;

CLAASSEN, WAP .

[4]

Cullity B., 1978, MEASUREMENT RESIDUAL, V2nd, P447

[5]

GRAEF MWM, 1980, THESIS NIJMEGEN

[6] RESISTIVITY OF BULK SILICON AND OF DIFFUSED LAYERS IN SILICON [J].

IRVIN, JC .

BELL SYSTEM TECHNICAL JOURNAL, 1962, 41 (02) :387-+

[7]

Runyan W.R., 1965, SILICON SEMICONDUCTO, P213

[8] ELECTRICAL PROPERTIES OF POLYCRYSTALLINE SILICON FILMS [J].

SETO, JYW .

[9]

Warren B.E., 1969, XRAY DIFFRACTION