ELECTRIC-FIELD DEPENDENCE OF EXCITON SPIN RELAXATION IN GAAS/ALGAAS QUANTUM-WELLS

被引：52

作者：

VINATTIERI, A

SHAH, J

DAMEN, TC

GOOSSEN, KW

PFEIFFER, LN

MAIALLE, MZ

SHAM, LJ

机构：

[1] AT&T BELL LABS,MURRAY HILL,NJ 07974

[2] UNIV CALIF SAN DIEGO,DEPT PHYS,LA JOLLA,CA 92093

[3] UNIV FLORENCE,DIPARTIMENTO FIS,I-50125 FLORENCE,ITALY

来源：

APPLIED PHYSICS LETTERS | 1993年 / 63卷 / 23期

关键词：

D O I：

10.1063/1.110211

中图分类号：

O59 [应用物理学];

学科分类号：

摘要：

We report measurements of the dependence of exciton spin relaxation in quantum-well structures on an external electric field along the growth direction and on the well thickness. The results show that exciton spin relaxation is dominated by electron-hole exchange interaction, and provide a quantitative understanding of various spin-relaxation rates and their dependence on electric field and well thickness.

引用

页码：3164 / 3166

页数：3

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