MOSFET MOBILITY DEGRADATION DUE TO INTERFACE-STATES, GENERATED BY FOWLER-NORDHEIM ELECTRON INJECTION

被引：4

作者：

DEJENFELT, AT

ENGSTROM, O

机构：

[1] Department of Solid State Electronics, Chalmers University of Technology

来源：

MICROELECTRONIC ENGINEERING | 1991年 / 15卷 / 1-4期

关键词：

D O I：

10.1016/0167-9317(91)90265-F

中图分类号：

TM [电工技术]; TN [电子技术、通信技术];

学科分类号：

0808 ; 0809 ;

摘要：

The degradation of the MOSFET inversion channel mobility due to generated interface-states was studied, generating the interface-states by Fowler-Nordheim injection. The inversion channel carrier mobility was directly related to the interface-state density and was not affected by the generated oxide charge. The mobility degradation due to the interface-states was in agreement with previous degradation data based on fixed interface charge by Sun and Plummer [1], provided the mobility was measured at the point of maximum transconductance, and only the charged fraction of the total interface-state spectrum under strong inversion conditions was included in the mobility model.

引用

页码：461 / 464

页数：4

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