HOT-CARRIER STRESS EFFECTS IN P-MOSFETS - PHYSICAL EFFECTS RELEVANT FOR CIRCUIT OPERATION

被引：10

作者：

WEBER, W

BROX, M

VONSCHWERIN, A

THEWES, R

机构：

[1] Siemens Corporate Research and Development, ZFE BT ACM, D8000 Munich 83

[2] M. Brox is presently with Siemens Components, Essex Junction, VT 05452

来源：

MICROELECTRONIC ENGINEERING | 1993年 / 22卷 / 1-4期

关键词：

Electron energy levels - Electron transport properties - Hot carriers - Mathematical models - Stress analysis;

D O I：

10.1016/0167-9317(93)90168-5

中图分类号：

TM [电工技术]; TN [电子技术、通信技术];

学科分类号：

0808 ; 0809 ;

摘要：

This paper presents a discussion of the present status of understanding p-channel MOSFET degradation. Various published time dependences are reviewed. On the basis of the logarithmic time dependence we develop a model with the essential feature being a region of trapped charges spreading logarithmically over time in the direction of source. Evidences for and against this model are discussed in detail. Finally, applications in conjunction with lifetime extrapolations for digital operation and with the degradation of analog device parameters are presented.

引用

页码：253 / 260

页数：8

共 20 条

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