OBSERVATION OF OSCILLATORY LINEWIDTH IN THE CYCLOTRON-RESONANCE OF GAAS-ALXGA1-XAS HETEROSTRUCTURES

被引：89

作者：

ENGLERT, T ^{[1
]}

MAAN, JC ^{[1
]}

UIHLEIN, C ^{[1
]}

TSUI, DC ^{[1
]}

GOSSARD, AC ^{[1
]}

机构：

[1] BELL TEL LABS INC,MURRAY HILL,NJ 07974

来源：

SOLID STATE COMMUNICATIONS | 1983年 / 46卷 / 07期

关键词：

D O I：

10.1016/0038-1098(83)90687-7

中图分类号：

O469 [凝聚态物理学];

学科分类号：

070205 ;

摘要：

引用

页码：545 / 548

页数：4

共 10 条

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[9] CYCLOTRON-RESONANCE OF ELECTRON INVERSION-LAYERS IN SI(001) METAL-OXIDE-SEMICONDUCTOR FIELD-EFFECT TRANSISTORS (MOSFETS) [J].

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