SPECTRUM OF FLUCTUATIONS AND LIFEPATH IN SILICON

被引:3
作者
OKAZAKI, S
HIRAMATSU, M
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D O I
10.1016/0038-1101(65)90117-6
中图分类号
TM [电工技术]; TN [电子技术、通信技术];
学科分类号
0808 ; 0809 ;
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页码:401 / +
页数:1
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共 8 条
[1]   FLUCTUATIONS OF THE NUMBERS OF ELECTRONS AND HOLES IN A SEMICONDUCTOR [J].
BURGESS, RE .
PROCEEDINGS OF THE PHYSICAL SOCIETY OF LONDON SECTION B, 1955, 68 (09) :661-671
[2]   AMBIPOLAR TRANSPORT OF CARRIER DENSITY FLUCTUATIONS IN GERMANIUM [J].
HILL, JE ;
VANVLIET, KM .
PHYSICA, 1958, 24 (09) :709-720
[3]   OHMIC ALUMINUM-N-TYPE SILICON CONTACT [J].
MATLOW, SL ;
RALPH, EL .
JOURNAL OF APPLIED PHYSICS, 1959, 30 (04) :541-543
[4]   SPONTANEOUS FLUCTUATIONS AND LIFEPATH IN SILICON [J].
OKAZAKI, S ;
HIRAMATSU, M .
JOURNAL OF THE PHYSICAL SOCIETY OF JAPAN, 1963, 18 (04) :590-&
[5]   CONFIRMATION OF LIFETIMES BY NOISE AND BY HAYNES-SHOCKLEY METHOD [J].
OKAZAKI, S .
JOURNAL OF APPLIED PHYSICS, 1961, 32 (04) :712-&
[6]   MEASUREMENT OF LIFETIME IN GE FROM NOISE [J].
OKAZAKI, S ;
OKI, H .
PHYSICAL REVIEW, 1960, 118 (04) :1023-1024
[7]   THE TRANSPORT OF ADDED CURRENT CARRIERS IN A HOMOGENEOUS SEMICONDUCTOR [J].
VANROOSBROECK, W .
PHYSICAL REVIEW, 1953, 91 (02) :282-289
[8]  
VANZIEL A, 1959, FLUCTUATION PHENOMEN