LIGHT-SCATTERING DETERMINATION OF SUBBAND STRUCTURE AND POPULATION OF MODULATION-DOPED MULTIPLE QUANTUM-WELLS

被引：11

作者：

RICHARDS, D ^{[1
]}

FASOL, G ^{[1
]}

PLOOG, K ^{[1
]}

机构：

[1] MAX PLANCK INST FESTKORPERFORSCH,W-7000 STUTTGART 80,GERMANY

来源：

APPLIED PHYSICS LETTERS | 1990年 / 56卷 / 17期

关键词：

D O I：

10.1063/1.103130

中图分类号：

O59 [应用物理学];

学科分类号：

摘要：

We show that electronic Raman scattering measurements of the plasmon dispersion in combination with calculations of the random phase approximation dielectric response and self-consistent electronic subband calculations can determine the subband structure and populations of modulation-doped GaAs/Al xGa1-xAs multiple quantum wells with multiple subband occupancy. Thus we present a contactless optical alternative to measurements of Shubnikov-de Haas oscillations for the determination of carrier concentrations. The same technique can also be applied for the characterization of parallel conduction from doped AlGaAs layers in modulation-doped heterostructures.

引用

页码：1649 / 1651

页数：3

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