AMBIPOLAR FIELD-EFFECT TRANSISTOR

被引：18

作者：

PFLEIDERER, H

KUSIAN, W

机构：

[1] Siemens AG, Research Lab, Munich,, West Ger, Siemens AG, Research Lab, Munich, West Ger

来源：

SOLID-STATE ELECTRONICS | 1986年 / 29卷 / 03期

关键词：

ELECTRIC MEASUREMENTS;

D O I：

10.1016/0038-1101(86)90210-8

中图分类号：

TM [电工技术]; TN [电子技术、通信技术];

学科分类号：

0808 ; 0809 ;

摘要：

The results of measurements performed on an amorphous-silicon thin-film transistor structure are presented and interpreted. The device characteristics show a continuous alternation between n-channel and p-channel operation, an 'ambipolar' effect that is made possible by the provision of ohmic source and drain contacts.

引用

页码：317 / 319

页数：3