STRUCTURAL CHARACTERIZATION OF TI-SI THIN-FILM SUPERLATTICES

被引:16
作者
BRASEN, D
WILLENS, RH
NAKAHARA, S
BOONE, T
机构
关键词
D O I
10.1063/1.337606
中图分类号
O59 [应用物理学];
学科分类号
摘要
引用
收藏
页码:3527 / 3531
页数:5
相关论文
共 8 条
[1]   STUDY OF MBE GROWTH OF GEXSI1-X ON (111) VICINAL SURFACES OF SI SUBSTRATES [J].
BRASEN, D ;
NAKAHARA, S ;
BEAN, JC .
JOURNAL OF APPLIED PHYSICS, 1985, 58 (05) :1860-1863
[2]   CHEMICAL AND STRUCTURAL ASPECTS OF REACTION AT THE TI SI INTERFACE [J].
BUTZ, R ;
RUBLOFF, GW ;
TAN, TY ;
HO, PS .
PHYSICAL REVIEW B, 1984, 30 (10) :5421-5429
[3]   TRANSMISSION ELECTRON-MICROSCOPY OF HYDROGENATED AMORPHOUS-SEMICONDUCTOR SUPERLATTICES [J].
DECKMAN, HW ;
DUNSMUIR, JH ;
ABELES, B .
APPLIED PHYSICS LETTERS, 1985, 46 (02) :171-173
[4]   CRYSTAL-STRUCTURES AND ELECTRICAL-PROPERTIES OF TITANIUM FILMS EVAPORATED IN HIGH-VACUUM [J].
IGASAKI, Y ;
MITSUHASHI, H .
THIN SOLID FILMS, 1978, 51 (01) :33-42
[5]   PROPERTIES OF AMORPHOUS SEMICONDUCTING MULTILAYER FILMS [J].
KAKALIOS, J ;
FRITZSCHE, H ;
IBARAKI, N ;
OVSHINSKY, SR .
JOURNAL OF NON-CRYSTALLINE SOLIDS, 1984, 66 (1-2) :339-344
[6]   TI-SI MIXING AT ROOM-TEMPERATURE - A HIGH-RESOLUTION ION BACKSCATTERING STUDY [J].
VANLOENEN, EJ ;
FISCHER, AEMJ ;
VANDERVEEN, JF .
SURFACE SCIENCE, 1985, 155 (01) :65-78
[7]  
WILLENS RH, UNPUB APPL PHYS LETT
[8]   OPTIMIZATION OF A RUTHERFORD BACKSCATTERING GEOMETRY FOR ENHANCED DEPTH RESOLUTION [J].
WILLIAMS, JS .
NUCLEAR INSTRUMENTS & METHODS, 1975, 126 (02) :205-215