CARRIER CAPTURE PROCESSES IN SEMICONDUCTOR SUPERLATTICES DUE TO EMISSION OF CONFINED PHONONS

被引：11

作者：

DEPAULA, AM ^{[1
]}

WEBER, G ^{[1
]}

机构：

[1] UNIV ESTADUAL CAMPINAS,INST FIS,BR-13083 CAMPINAS,BRAZIL

来源：

JOURNAL OF APPLIED PHYSICS | 1995年 / 77卷 / 12期

关键词：

D O I：

10.1063/1.359099

中图分类号：

O59 [应用物理学];

学科分类号：

摘要：

Carrier capture times due to the emission of confined longitudinal optical phonons via electron-phonon (Fröhlich) interaction are calculated for GaAs-AlxGa1-xAs and In0.47Ga 0.53As-InP superlattices. A dielectric continuum model is used to describe the confined phonon modes and we use a Kronig-Penney type calculation for the electron envelope functions. We compare our results with capture times measured by several optical techniques and we discuss the importance of a knowledge of the carrier excitation details in order to obtain an appropriate interpretation of the experimental results. We show that electrons excited into confined states with a large kinetic energy strongly influence the overall capture times. © 1995 American Institute of Physics.

引用

页码：6306 / 6312

页数：7

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