JUNCTION STRUCTURE AND PHYSICAL-PROPERTIES OF HETEROEPITAXIAL CDS/CDTE

被引：30

作者：

NAKAYAMA, N ^{[1
]}

ARITA, T ^{[1
]}

ARAMOTO, T ^{[1
]}

NISHIO, T ^{[1
]}

HIGUCHI, H ^{[1
]}

OMURA, K ^{[1
]}

HIRAMATSU, K ^{[1
]}

UENO, N ^{[1
]}

MUROZONO, M ^{[1
]}

TAKAKURA, H ^{[1
]}

机构：

[1] TOYAMA PREFECTURAL UNIV,KOSUGI,TOYAMA 93903,JAPAN

来源：

SOLAR ENERGY MATERIALS AND SOLAR CELLS | 1994年 / 35卷 / 1-4期

关键词：

D O I：

10.1016/0927-0248(94)90150-3

中图分类号：

TE [石油、天然气工业]; TK [能源与动力工程];

学科分类号：

0807 ; 0820 ;

摘要：

The screen printed CdS/CdTe hetero-junctions formed on the (0001), (1120), (1010) surfaces of CdS single crystals have been studied by an X-ray double crystal spectrometer, electron diffraction, transmission electron microscopy (TEM), and EBIC. For CdS/CdTe formed on the CdS (0001) structure, the epitaxiality of the CdTe layer formed on (0001) of CdS was better than that formed on the other surfaces. The diffusion length of minority carriers formed on the single crystal CdS was found to be larger than that of sintered CdS/CdTe junction prepared by the screen printing method especially for the junctions grown on the (0001) plane of CdS.

引用

页码：271 / 278

页数：8