ELECTRICAL-PROPERTIES OF MBE-GROWN GAAS/N-ALGAAS HETEROSTRUCTURES AND APPLICATION TO HIGH-SPEED DEVICES

被引：3

作者：

HIYAMIZU, S

MIMURA, T

机构：

来源：

JOURNAL OF VACUUM SCIENCE & TECHNOLOGY B | 1983年 / 1卷 / 02期

关键词：

D O I：

10.1116/1.582626

中图分类号：

TM [电工技术]; TN [电子技术、通信技术];

学科分类号：

0808 ; 0809 ;

摘要：

引用

页码：456 / 456

页数：1

共 10 条

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[6] GROWTH-CONDITIONS TO ACHIEVE MOBILITY ENHANCEMENT IN ALXGA1-XAS-GAAS HETEROJUNCTIONS BY MBE [J].

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[7] MOBILITY ENHANCEMENT IN INVERTED ALXGA1-XAS/GAAS MODULATION DOPED STRUCTURES AND ITS DEPENDENCE ON DONOR-ELECTRON SEPARATION [J].

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[8]

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[9] 2-DIMENSIONAL ELECTRON-GAS AT A SEMICONDUCTOR-SEMICONDUCTOR INTERFACE [J].

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[10] HIGH-SPEED LOW-POWER DCFL USING PLANAR TWO-DIMENSIONAL ELECTRON-GAS FET TECHNOLOGY [J].

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