W-BAND HIGH-EFFICIENCY INP-BASED POWER HEMT WITH 600 GHZ F(MAX)

被引：123

作者：

SMITH, PM

LIU, SMJ

KAO, MY

HO, P

WANG, SC

DUH, KHG

FU, ST

CHAO, PC

机构：

[1] Lockheed Martin Electronics Laboratory, Syracuse

来源：

IEEE MICROWAVE AND GUIDED WAVE LETTERS | 1995年 / 5卷 / 07期

关键词：

W band power transistors;

D O I：

10.1109/75.392284

中图分类号：

TM [电工技术]; TN [电子技术、通信技术];

学科分类号：

0808 ; 0809 ;

摘要：

We have developed 0.1-mu m gate-length InAlAs/InGaAs/InP power HEMT's with record efficiency and power gain at 94 GHz. A 200 mu m gate-width device has produced 58 mW output power with 6.4 dB power gain and 33% power-added efficiency. The extrapolated f(max) of 600 GHz is the highest reported to date for any transistor, and smaller, 30-mu m devices fabricated on the same wafer exhibit excellent noise figure (1.4 dB at 94 GHz), demonstrating the applicability of this technology to multifunction MMIC's.

引用

页码：230 / 232

页数：3

共 14 条

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