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CHEMICAL VAPOUR DEPOSITION PROMOTED BY RF DISCHARGE
被引:166
作者
:
STERLING, HF
论文数:
0
引用数:
0
h-index:
0
STERLING, HF
SWANN, RCG
论文数:
0
引用数:
0
h-index:
0
SWANN, RCG
机构
:
来源
:
SOLID-STATE ELECTRONICS
|
1965年
/ 8卷
/ 08期
关键词
:
D O I
:
10.1016/0038-1101(65)90033-X
中图分类号
:
TM [电工技术];
TN [电子技术、通信技术];
学科分类号
:
0808 ;
0809 ;
摘要
:
引用
收藏
页码:653 / &
相关论文
共 5 条
[1]
ELECTRICAL PROPERTIES OF THIN ORGANIC FILMS
BRADLEY, A
论文数:
0
引用数:
0
h-index:
0
BRADLEY, A
HAMMES, JP
论文数:
0
引用数:
0
h-index:
0
HAMMES, JP
[J].
JOURNAL OF THE ELECTROCHEMICAL SOCIETY,
1963,
110
(01)
: 15
-
22
[2]
GLOW DISCHARGE FORMATION OF SILICON OXIDE AND DEPOSITION OF SILICON OXIDE THIN FILM CAPACITORS BY GLOW DISCHARGE TECHNIQUES
ING, SW
论文数:
0
引用数:
0
h-index:
0
ING, SW
DAVERN, W
论文数:
0
引用数:
0
h-index:
0
DAVERN, W
[J].
JOURNAL OF THE ELECTROCHEMICAL SOCIETY,
1965,
112
(03)
: 284
-
&
[3]
RABENAU A, 1963, BER DTSCH KERAM GES, V40, P6
[4]
DIELECTRIC PROPERTIES OF CROSS-LINKED POLYSTYRENE FILM FORMED IN GLOW DISCHARGE
STUART, M
论文数:
0
引用数:
0
h-index:
0
STUART, M
[J].
NATURE,
1963,
199
(488)
: 59
-
&
[5]
Turkdogan E.T., 1958, J APPL CHEM, V8, P296
←
1
→
共 5 条
[1]
ELECTRICAL PROPERTIES OF THIN ORGANIC FILMS
BRADLEY, A
论文数:
0
引用数:
0
h-index:
0
BRADLEY, A
HAMMES, JP
论文数:
0
引用数:
0
h-index:
0
HAMMES, JP
[J].
JOURNAL OF THE ELECTROCHEMICAL SOCIETY,
1963,
110
(01)
: 15
-
22
[2]
GLOW DISCHARGE FORMATION OF SILICON OXIDE AND DEPOSITION OF SILICON OXIDE THIN FILM CAPACITORS BY GLOW DISCHARGE TECHNIQUES
ING, SW
论文数:
0
引用数:
0
h-index:
0
ING, SW
DAVERN, W
论文数:
0
引用数:
0
h-index:
0
DAVERN, W
[J].
JOURNAL OF THE ELECTROCHEMICAL SOCIETY,
1965,
112
(03)
: 284
-
&
[3]
RABENAU A, 1963, BER DTSCH KERAM GES, V40, P6
[4]
DIELECTRIC PROPERTIES OF CROSS-LINKED POLYSTYRENE FILM FORMED IN GLOW DISCHARGE
STUART, M
论文数:
0
引用数:
0
h-index:
0
STUART, M
[J].
NATURE,
1963,
199
(488)
: 59
-
&
[5]
Turkdogan E.T., 1958, J APPL CHEM, V8, P296
←
1
→