EFFECT OF ACTIVE LAYER PLACEMENT ON THE THRESHOLD CURRENT OF 1.3-MU-M INGAASP ETCHED MESA BURIED HETEROSTRUCTURE LASERS

被引：11

作者：

DUTTA, NK

NELSON, RJ

WILSON, RB

MAHER, DM

WRIGHT, PD

SHENG, TT

LIN, PSD

MARCUS, RB

机构：

来源：

APPLIED PHYSICS LETTERS | 1984年 / 45卷 / 04期

关键词：

D O I：

10.1063/1.95261

中图分类号：

O59 [应用物理学];

学科分类号：

摘要：

引用

页码：337 / 339

页数：3

共 11 条

[1] ENHANCED INDIUM-PHOSPHIDE SUBSTRATE PROTECTION FOR LIQUID-PHASE EPITAXY GROWTH OF INDIUM-GALLIUM-ARSENIDE-PHOSPHIDE DOUBLE HETEROSTRUCTURE LASERS [J].

BESOMI, P ;

WILSON, RB ;

WAGNER, WR ;

NELSON, RJ .

JOURNAL OF APPLIED PHYSICS, 1983, 54 (02) :535-539

[2]

DUTTA NK, 1984, J LIGHTWAVE TECHNOL, V2, P160

[3]

DUTTA NK, 1984, J LIGHTWAVE TECHNOL, V2, P201

[4] FABRICATION AND CHARACTERIZATION OF NARROW STRIPE INGAASP-INP BURIED HETEROSTRUCTURE LASERS [J].

HIRAO, M ;

DOI, A ;

TSUJI, S ;

NAKAMURA, M ;

AIKI, K .

JOURNAL OF APPLIED PHYSICS, 1980, 51 (08) :4539-4540

[5]

ISHIKAWA H, 1981, ELECTRON LETT, V17, P415

[6]

KAMINOW IP, 1979, ELECTRON LETT, V15, P764

[7] LIQUID-PHASE EPITAXIAL-GROWTH ON (111)IN PLANES OF INP [J].

LOGAN, RA ;

HENRY, CH ;

MERRITT, FR ;

MAHAJAN, S .

JOURNAL OF APPLIED PHYSICS, 1983, 54 (09) :5462-5463

[8]

MAHER DM, UNPUB

[9]

MITO I, 1983, J LIGHTWAVE TECHNOL, V1, P195

[10] CW ELECTROOPTICAL PROPERTIES OF INGAASP (LAMBDA = 1.3 MU-M) BURIED-HETEROSTRUCTURE LASERS [J].

NELSON, RJ ;

WILSON, RB ;

WRIGHT, PD ;

BARNES, PA ;

DUTTA, NK .

IEEE JOURNAL OF QUANTUM ELECTRONICS, 1981, 17 (02) :202-207

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